Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M010A060FH
GET PRICE
RFQ
12,660
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 600V 10A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 600V 10A (Tc) 750 mOhm @ 5A, 10V 4V @ 250µA 36nC @ 10V 1891pF @ 25V 10V ±30V
GP2M010A060F
Per Unit
$1.19
RFQ
69,360
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 600V 10A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 600V 10A (Tc) 700 mOhm @ 5A, 10V 5V @ 250µA 35nC @ 10V 1660pF @ 25V 10V ±30V
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