- Part Status :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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34,920
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 13A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 13A (Ta) | 500 mOhm @ 6.5A, 10V | 4V @ 1mA | 62nC @ 10V | 3100pF @ 25V | 10V | ±30V | ||
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57,080
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 13A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 13A (Ta) | 430 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | 10V | ±30V |
