4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK20A60U(Q,M)
Per Unit
$3.32
RFQ
52,980
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 5V @ 1mA 27nC @ 10V 1470pF @ 10V 10V ±30V
TK20A60W,S5VX
Per Unit
$2.82
RFQ
21,040
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 20A (Ta) 155 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V
R6020ANX
Per Unit
$3.89
RFQ
76,980
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 20A TO-220FM - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel - 600V 20A (Ta) 220 mOhm @ 10A, 10V 4.5V @ 1mA 65nC @ 10V 2040pF @ 25V 10V ±30V
TK20A60W5,S5VX
Per Unit
$1.92
RFQ
22,960
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 20A (Ta) 175 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
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