Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6030KNX
Per Unit
$1.95
RFQ
49,280
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 30A TO220FM Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 86W (Tc) N-Channel 600V 30A (Tc) 130 mOhm @ 14.5A, 10V 5V @ 1mA 56nC @ 10V 2350pF @ 25V 10V ±20V
R6030ENX
Per Unit
$2.96
RFQ
65,240
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 30A TO220 Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 40W (Tc) N-Channel 600V 30A (Tc) 130 mOhm @ 14.5A, 10V 4V @ 1mA 85nC @ 10V 2100pF @ 25V 10V ±30V
R6030KNXC7
Per Unit
$2.14
RFQ
75,600
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 30A TO220FM Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 86W (Tc) N-Channel 600V 30A (Tc) 130 mOhm @ 14.5A, 10V 5V @ 1mA 56nC @ 10V 2350pF @ 25V 10V ±20V
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