- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
58,480
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | ||
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GET PRICE |
75,700
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|
ON Semiconductor | MOSFET N-CH 600V 3.5A TO-220FI | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FI(LS) | 2W (Ta), 28W (Tc) | N-Channel | - | 600V | 3.5A (Tc) | 3.25 Ohm @ 1.8A, 10V | 5V @ 1mA | 11nC @ 10V | 260pF @ 30V | 10V | ±30V | ||
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GET PRICE |
31,020
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|
ON Semiconductor | MOSFET N-CH 600V 1.6A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 28W (Tc) | N-Channel | - | 600V | 1.6A (Tc) | 4.7 Ohm @ 800mA, 10V | 5V @ 250µA | 11nC @ 10V | 350pF @ 25V | 10V | ±30V | ||
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GET PRICE |
37,740
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | - | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||
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18,000
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38W (Tc) | N-Channel | - | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
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|
61,620
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38W (Tc) | N-Channel | - | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V |
