4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SK4016(Q)
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RFQ
34,920
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel 600V 13A (Ta) 500 mOhm @ 6.5A, 10V 4V @ 1mA 62nC @ 10V 3100pF @ 25V 10V ±30V
FCPF260N60E
Per Unit
$1.29
RFQ
21,520
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ON Semiconductor MOSFET N CH 600V 15A TO-220F SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 36W (Tc) N-Channel 600V 15A (Tc) 260 mOhm @ 7.5A, 10V 3.5V @ 250µA 62nC @ 10V 2500pF @ 25V 10V ±20V
FCPF260N60E-F152
Per Unit
$2.29
RFQ
37,320
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ON Semiconductor MOSFET N CH 600V 15A TO-220F SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 36W (Tc) N-Channel 600V 15A (Tc) 260 mOhm @ 7.5A, 10V 3.5V @ 250µA 62nC @ 10V 2500pF @ 25V - -
TSM60NB099CF C0G
Per Unit
$2.29
RFQ
19,480
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 38A ITO220S - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 69W (Tc) N-Channel 600V 38A (Tc) 99 mOhm @ 5.3A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V
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