Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M010A060F
Per Unit
$1.19
RFQ
69,360
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 600V 10A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 600V 10A (Tc) 700 mOhm @ 5A, 10V 5V @ 250µA 35nC @ 10V 1660pF @ 25V 10V ±30V
R6015FNX
Per Unit
$3.43
RFQ
32,360
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 15A TO-220FM - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 50W (Tc) N-Channel 600V 15A (Ta) 350 mOhm @ 7.5A, 10V 5V @ 1mA 42nC @ 10V 1660pF @ 25V 10V ±30V
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