Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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27,520
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 35W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 1954pF @ 100V 10V ±30V
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RFQ
66,480
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 1954pF @ 100V 10V ±30V
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