- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
42,520
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|
Rohm Semiconductor | MOSFET N-CH 200V 10A TO-220FN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 35W (Tc) | N-Channel | 200V | 10A (Ta) | 360 mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | 543pF @ 10V | 10V | ±30V | ||
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GET PRICE |
35,100
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|
Rohm Semiconductor | MOSFET N-CH 60V 10A TO-220FN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 30W (Tc) | N-Channel | 60V | 10A (Ta) | 95 mOhm @ 5A, 10V | 2.5V @ 1mA | - | 1600pF @ 10V | 4V, 10V | ±20V | ||
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65,140
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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GET PRICE |
29,040
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|
Renesas Electronics America | MOSFET N-CH 600V 10A TO220 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | 600V | 10A (Ta) | 920 mOhm @ 5A, 10V | - | 30nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
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GET PRICE |
27,300
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|
Renesas Electronics America | MOSFET N-CH 500V 10A TO220 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 29.5W (Tc) | N-Channel | 500V | 10A (Ta) | 850 mOhm @ 5A, 10V | - | 23nC @ 10V | 765pF @ 25V | 10V | ±30V | ||
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66,180
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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48,880
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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24,860
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|
Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | 1130pF @ 300V | 10V | ±30V | |||
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25,660
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|
Rohm Semiconductor | MOSFET N-CH 200V 10A TO-220FN | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 35W (Tc) | N-Channel | 200V | 10A (Ta) | 360 mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | 543pF @ 10V | 10V | ±30V | |||
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24,920
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|
Rohm Semiconductor | MOSFET N-CH 600V 10A TO-220FM | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 650 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 1600pF @ 25V | 10V | ±30V | |||
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68,500
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|
Rohm Semiconductor | MOSFET N-CH 600V 10A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 10A (Ta) | - | - | - | - | 10V | ±30V | |||
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25,120
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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76,900
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|
Rohm Semiconductor | MOSFET N-CH 250V 10A TO-220FM | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 250V | 10A (Ta) | - | - | - | - | 10V | ±30V | |||
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36,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V |
