- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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39,520
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|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Isolated Tab | 40W (Tc) | N-Channel | - | 650V | 34A (Tc) | 100 mOhm @ 17A, 10V | 5V @ 1.5mA | 56nC @ 10V | 3230pF @ 25V | 10V | ±30V | |||
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14,920
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 34A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 34A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
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53,300
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|
Alpha & Omega Semiconductor Inc. | MOSFET P-CH 40V 34A TO220FL | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 33W (Tc) | P-Channel | - | 40V | 34A (Tc) | 16 mOhm @ 20A, 10V | 2.5V @ 250µA | 55nC @ 10V | 2550pF @ 20V | 4.5V, 10V | ±20V | |||
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73,560
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|
STMicroelectronics | MOSFET | MDmesh™ M2 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 600V | 34A (Tc) | 88 mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | 2500pF @ 100V | 10V | ±25V | |||
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14,880
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|
Infineon Technologies | MOSFET N-CH 150V 34A TO-220AB FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 150V | 34A (Tc) | 16 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4560pF @ 25V | 10V | ±30V | |||
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30,240
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|
STMicroelectronics | MOSFET N-CH 600V 34A TO220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 600V | 34A (Tc) | 88 mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | 2500pF @ 100V | 10V | ±25V | |||
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32,760
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|
STMicroelectronics | MOSFET N-CH 600V 34A | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 600V | 34A (Tc) | 93 mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | 2500pF @ 100V | 10V | ±25V | |||
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65,760
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|
Infineon Technologies | MOSFET N-CH 150V 34A TO-220AB FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 150V | 34A (Tc) | 16 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4440pF @ 50V | 10V | ±30V | |||
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70,960
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 600V 34A EP TO220FP | MDmesh™ M2-EP | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 600V | 34A (Tc) | 87 mOhm @ 17A, 10V | 4.75V @ 250µA | 55nC @ 10V | 2370pF @ 100V | 10V | ±25V |
