- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
67,880
One step to sell excess stocks.Or submit Qty to get quotes
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32.8W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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27,000
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|
STMicroelectronics | MOSFET N-CH 650V 4A TO-220FP | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
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54,760
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | N-CHANNEL 650 V, 1.2 OHM TYP., 4 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TA) | Through Hole | TO-220-3 Full Pack | TO-220FP | 620mW (Ta), 77W (Tc) | N-Channel | 650V | 4A (Tc) | 2.7 Ohm @ 2A, 10V | 4V @ 250µA | - | 463pF @ 25V | 10V | ±30V |
