- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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62,480
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 800V 4A TO220F | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 24W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | 880pF @ 100V | 10V | ±20V | |||
|
|
38,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 600V 4A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | - | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | 250pF @ 25V | 10V | ±20V | |||
|
|
|
66,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 4A TO220FP | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 38W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V |
