Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRLI2910
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RFQ
73,460
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 31A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 63W (Tc) N-Channel - 100V 31A (Tc) 26 mOhm @ 16A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V
IRFIZ44NPBF
Per Unit
$0.94
RFQ
14,600
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Infineon Technologies MOSFET N-CH 55V 31A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 45W (Tc) N-Channel - 55V 31A (Tc) 24 mOhm @ 17A, 10V 4V @ 250µA 65nC @ 10V 1300pF @ 25V 10V ±20V
IRLI2910PBF
Per Unit
$1.14
RFQ
65,900
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 31A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 63W (Tc) N-Channel - 100V 31A (Tc) 26 mOhm @ 16A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V
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