- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
69,200
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3.5A (Ta) | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
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GET PRICE |
31,460
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 3.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 550V | 3.5A (Ta) | 2.45 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||
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GET PRICE |
31,440
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|
ON Semiconductor | MOSFET N-CH 900V 3.5A TO-220FI | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FI(LS) | 2W (Ta), 35W (Tc) | N-Channel | - | 900V | 3.5A (Ta) | 3.6 Ohm @ 2.5A, 10V | - | 33nC @ 10V | 650pF @ 30V | 10V | ±30V | ||
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GET PRICE |
37,740
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | - | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V |
