Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RCX511N25
Per Unit
$1.76
RFQ
52,440
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 250V 51A TO220 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 2.23W (Ta), 40W (Tc) N-Channel 250V 51A (Tc) 65 mOhm @ 25.5A, 10V 5V @ 1mA 120nC @ 10V 7000pF @ 25V 10V ±30V
FDPF51N25
Per Unit
$1.75
RFQ
66,260
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 250V 51A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 250V 51A (Tc) 60 mOhm @ 25.5A, 10V 5V @ 250µA 70nC @ 10V 3410pF @ 25V 10V ±30V
Default Photo
Per Unit
$2.03
RFQ
57,800
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 250V 51A TO220F - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 250V 51A (Tc) 60 mOhm @ 25.5A, 10V 5V @ 250µA 70nC @ 10V 3410pF @ 25V 10V ±30V
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