Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK1003DPP-E0#T2
Per Unit
$0.79
RFQ
43,420
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V - 59nC @ 10V 4150pF @ 10V 10V ±20V
FKV550N
Per Unit
$0.64
RFQ
48,680
One step to sell excess stocks.Or submit Qty to get quotes
Sanken MOSFET N-CH 50V 50A TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 35W (Tc) N-Channel 50V 50A (Ta) 15 mOhm @ 25A, 10V 4.2V @ 250µA - 2000pF @ 10V 10V ±20V
FKV550T
Per Unit
$0.73
RFQ
61,060
One step to sell excess stocks.Or submit Qty to get quotes
Sanken MOSFET N-CH 50V 50A TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 35W (Tc) N-Channel 50V 50A (Ta) 13 mOhm @ 25A, 10V 2.5V @ 250µA - 2700pF @ 10V 10V ±20V
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