Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF4N50
GET PRICE
RFQ
27,160
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 500V 2.3A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 35W (Tc) N-Channel - 500V 2.3A (Tc) 2.7 Ohm @ 1.15A, 10V 5V @ 250µA 13nC @ 10V 460pF @ 25V 10V ±30V
FQPF3N25
Per Unit
$0.79
RFQ
42,820
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 250V 2.3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 27W (Tc) N-Channel - 250V 2.3A (Tc) 2.2 Ohm @ 1.15A, 10V 5V @ 250µA 5.2nC @ 10V 170pF @ 25V 10V ±30V
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