Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCPF190N65FL1
Per Unit
$1.92
RFQ
31,380
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 650V 20.6A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 650V 20.6A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 78nC @ 10V 3055pF @ 100V 10V ±20V
FCPF190N60E
Per Unit
$0.75
RFQ
78,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 10V ±20V
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