Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDPF12N35
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RFQ
33,320
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 350V 12A TO-220F UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 31.3W (Tc) N-Channel - 350V 12A (Tc) 380 mOhm @ 6A, 10V 5V @ 250µA 25nC @ 10V 1110pF @ 25V 10V ±30V
STF14NM65N
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RFQ
68,660
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STMicroelectronics MOSFET N-CH 650V 12A TO-220FP MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 650V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 45nC @ 10V 1300pF @ 50V 10V ±25V
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