- Manufacture :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
61,860
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 16A TO-220SIS | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | 450V | 16A | 270 mOhm @ 8A, 10V | - | - | - | - | - | ||
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19,160
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Rohm Semiconductor | MOSFET N-CH 500V 16A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 500V | 16A (Ta) | 270 mOhm @ 8A, 10V | 4.5V @ 1mA | 50nC @ 10V | 1800pF @ 25V | 10V | ±30V |
