Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF6N40CF
GET PRICE
RFQ
52,380
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ON Semiconductor MOSFET N-CH 400V 6A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 10V ±30V
FQPF6N40C
GET PRICE
RFQ
31,040
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ON Semiconductor MOSFET N-CH 400V 6A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 10V ±30V
FQPF6N40CT
GET PRICE
RFQ
45,740
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 400V 6A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 10V ±30V
SIHF6N40D-E3
Per Unit
$0.34
RFQ
43,180
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 400V 6A TO-220 FPAK - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 30W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V
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