- Manufacture :
- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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73,860
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|
Global Power Technologies Group | MOSFET N-CH 500V 4.5A TO220F | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | 627pF @ 25V | 10V | ±30V | ||
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21,780
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|
ON Semiconductor | INTEGRATED CIRCUIT | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 2.5 Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V | ||
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52,100
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|
ON Semiconductor | MOSFET N-CH 600V 4.5A TO-220F | QFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 2.5 Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V |
