Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHF23N60E-GE3
Per Unit
$0.98
RFQ
46,580
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 23A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 23A (Tc) 158 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 2418pF @ 100V 10V ±30V
STF40NF06
Per Unit
$0.92
RFQ
79,260
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 60V 23A TO220FP STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 60V 23A (Tc) 28 mOhm @ 11.5A, 10V 4V @ 250µA 32nC @ 10V 920pF @ 25V 10V ±20V
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