Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIZ48N
GET PRICE
RFQ
46,940
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 36A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 42W (Tc) N-Channel - 55V 36A (Tc) 16 mOhm @ 22A, 10V 4V @ 250µA 89nC @ 10V 1900pF @ 25V 10V ±20V
FCPF36N60NT
Per Unit
$5.60
RFQ
28,140
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 36A TO220F SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 - N-Channel - 600V 36A (Tc) 90 mOhm @ 18A, 10V 4V @ 250µA 112nC @ 10V 4785pF @ 100V 10V ±30V
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