Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFI4905
GET PRICE
RFQ
29,460
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 55V 41A TO-220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 63W (Tc) P-Channel - 55V 41A (Tc) 20 mOhm @ 22A, 10V 4V @ 250µA 180nC @ 10V 3400pF @ 25V 10V ±20V
STF120NF10
Per Unit
$2.41
RFQ
35,240
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 100V 41A TO-220FP STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 45W (Tc) N-Channel - 100V 41A (Tc) 10.5 mOhm @ 60A, 10V 4V @ 250µA 233nC @ 10V 5200pF @ 25V 10V ±20V
Page 1 / 1