Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHF6N65E-GE3
Per Unit
$1.41
RFQ
47,560
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 6A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 31W (Tc) N-Channel - 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHA6N65E-E3
Per Unit
$1.17
RFQ
73,580
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHANNEL 650V 7A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 31W (Tc) N-Channel - 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 1640pF @ 100V 10V ±30V
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