- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
50,460
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ON Semiconductor | MOSFET N-CH 100V 8.7A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | 100V | 8.7A (Tc) | 180 mOhm @ 4.35A, 10V | 4V @ 250µA | 16nC @ 10V | 450pF @ 25V | 10V | ±25V | ||
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14,800
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STMicroelectronics | MOSFET N-CH 600V 9A TO-220FP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | |||
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15,600
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 8A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 41.7W (Tc) | N-Channel | 600V | 8A (Tc) | 600 mOhm @ 1.7A, 10V | 4V @ 250µA | 16nC @ 10V | 528pF @ 100V | 10V | ±30V |