Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIZ34E
GET PRICE
RFQ
57,920
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Infineon Technologies MOSFET N-CH 60V 21A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 37W (Tc) N-Channel - 60V 21A (Tc) 42 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
STF19NM50N
Per Unit
$2.18
RFQ
13,280
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STMicroelectronics MOSFET N-CH 500V 14A TO-220FP MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 500V 14A (Tc) 250 mOhm @ 7A, 10V 4V @ 250µA 34nC @ 10V 1000pF @ 50V 10V ±25V
IRFIZ34NPBF
Per Unit
$0.85
RFQ
66,980
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 21A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 37W (Tc) N-Channel - 55V 21A (Tc) 40 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
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