- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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61,040
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Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 41W (Tc) | N-Channel | - | 100V | 12A (Tc) | 110 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
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70,380
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STMicroelectronics | MOSFET N-CH 650V 15A TO-220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 15A (Tc) | 270 mOhm @ 7.5A, 10V | 4V @ 250µA | 44nC @ 10V | 1280pF @ 50V | 10V | ±25V | ||
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37,720
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|
Vishay Siliconix | MOSFET N-CHAN 800V TO-220FP | E | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 31W (Tc) | N-Channel | - | 800V | 5.4A (Tc) | 940 mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | 827pF @ 100V | 10V | ±30V | |||
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75,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 41W (Tc) | N-Channel | - | 100V | 12A (Tc) | 110 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V |