Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF28N15T
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RFQ
17,380
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ON Semiconductor MOSFET N-CH 150V 16.7A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 60W (Tc) N-Channel 150V 16.7A (Tc) 90 mOhm @ 8.35A, 10V 4V @ 250µA 52nC @ 10V 1600pF @ 25V 10V ±25V
FQPF28N15
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RFQ
46,220
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ON Semiconductor MOSFET N-CH 150V 16.7A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 60W (Tc) N-Channel 150V 16.7A (Tc) 90 mOhm @ 8.35A, 10V 4V @ 250µA 52nC @ 10V 1600pF @ 25V 10V ±25V
IRFS644B_FP001
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RFQ
21,980
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ON Semiconductor MOSFET N-CH 250V 14A TO-220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 43W (Tc) N-Channel 250V 14A (Tc) 280 mOhm @ 7A, 10V 4V @ 250µA 60nC @ 10V 1600pF @ 25V 10V ±30V
IRFS644BYDTU_AS001
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RFQ
26,060
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ON Semiconductor MOSFET N-CH 250V 14A TO-220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 43W (Tc) N-Channel 250V 14A (Tc) 280 mOhm @ 7A, 10V 4V @ 250µA 60nC @ 10V 1600pF @ 25V 10V ±30V
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