Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF12P10
GET PRICE
RFQ
57,060
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 100V 8.2A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) P-Channel - 100V 8.2A (Tc) 290 mOhm @ 4.1A, 10V 4V @ 250µA 27nC @ 10V 800pF @ 25V 10V ±30V
STF19NF20
Per Unit
$1.08
RFQ
62,560
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 200V 15A TO-220FP MESH OVERLAY™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 200V 15A (Tc) 160 mOhm @ 7.5A, 10V 4V @ 250µA 24nC @ 10V 800pF @ 25V 10V ±20V
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