- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 250V 5A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 30W (Tc) | N-Channel | - | 250V | 5A (Ta) | 1100 mOhm @ 2.5A, 10V | 5.5V @ 1mA | 9nC @ 10V | 410pF @ 25V | 10V | ±30V | |||
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76,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | MOSFET N-CH 250V 5A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 2.23W (Ta), 30W (Tc) | N-Channel | - | 250V | 5A (Tc) | 1.36 Ohm @ 2.5A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
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16,240
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CHANNEL 850V 14A TO220 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 38W (Tc) | N-Channel | - | 850V | 14A (Tc) | 550 mOhm @ 7A, 10V | 5.5V @ 1mA | 30nC @ 10V | 1043pF @ 25V | 10V | ±30V |
