Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPA11N60C3XKSA1
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RFQ
67,600
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Infineon Technologies MOSFET N-CH 650V 11A TO220FP CoolMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 33W (Tc) N-Channel - 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
SPA11N60C3XKSA1
Per Unit
$1.69
RFQ
63,640
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Infineon Technologies MOSFET N-CH 600V 11A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 33W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
SPA12N50C3XKSA1
Per Unit
$0.76
RFQ
33,040
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Infineon Technologies MOSFET N-CH 560V 11.6A TO220FP CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 10V ±20V
SPA11N65C3XKSA1
Per Unit
$1.65
RFQ
46,680
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Infineon Technologies MOSFET N-CH 650V 11A TO-220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
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