Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP4N70X2M
Per Unit
$1.14
RFQ
74,720
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Isolated Tab 30W (Tc) N-Channel - 700V 4A (Tc) 850 mOhm @ 2A, 10V 4.5V @ 250µA 11.8nC @ 10V 386pF @ 25V 10V ±30V
STP3NK60ZFP
Per Unit
$0.95
RFQ
29,500
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 2.4A TO-220FP SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8nC @ 10V 311pF @ 25V 10V ±30V
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