- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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48,560
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|
ON Semiconductor | MOSFET N-CH 100V 27A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 55W (Tc) | N-Channel | - | 100V | 27A (Tc) | 39 mOhm @ 13.5A, 10V | 4V @ 250µA | 62nC @ 10V | 1800pF @ 25V | 10V | ±25V | ||
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56,040
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|
Infineon Technologies | MOSFET N-CH 100V 23A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 54W (Tc) | N-Channel | - | 100V | 23A (Tc) | 44 mOhm @ 12A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | ||
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19,160
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|
Rohm Semiconductor | MOSFET N-CH 500V 16A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | - | 500V | 16A (Ta) | 270 mOhm @ 8A, 10V | 4.5V @ 1mA | 50nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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69,120
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|
Renesas Electronics America | MOSFET N-CH 600V 16A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 600V | 16A (Ta) | 575 mOhm @ 8A, 10V | - | 45nC @ 10V | 1800pF @ 25V | 10V | ±30V | ||
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GET PRICE |
47,220
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|
Renesas Electronics America | MOSFET N-CH 500V 19A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 500V | 19A (Ta) | 390 mOhm @ 9.5A, 10V | - | 46nC @ 10V | 1800pF @ 25V | 10V | ±30V | ||
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24,260
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 12.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 550V | 12.5A (Ta) | 480 mOhm @ 6.3A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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60,140
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 13A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 13A (Ta) | 400 mOhm @ 6.5A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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47,920
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 12A (Ta) | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | |||
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50,140
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|
ON Semiconductor | MOSFET N-CH 100V 20A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33.8W (Tc) | N-Channel | - | 100V | 20A (Tc) | 38.2 mOhm @ 5.9A, 10V | 4.5V @ 250µA | 35nC @ 10V | 1800pF @ 25V | 10V | ±20V | |||
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78,920
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|
Infineon Technologies | MOSFET N-CH 100V 23A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 54W (Tc) | N-Channel | - | 100V | 23A (Tc) | 44 mOhm @ 12A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V |
