- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
14 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
54,660
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|
ON Semiconductor | MOSFET N-CH 250V 9.5A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | N-Channel | - | 250V | 9.5A (Tc) | 230 mOhm @ 4.75A, 10V | 5V @ 250µA | 35nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||
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GET PRICE |
31,460
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|
ON Semiconductor | MOSFET P-CH 200V 7.3A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | P-Channel | - | 200V | 7.3A (Tc) | 470 mOhm @ 3.65A, 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||
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GET PRICE |
64,180
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|
ON Semiconductor | MOSFET P-CH 200V 7.3A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | P-Channel | - | 200V | 7.3A (Tc) | 470 mOhm @ 3.65A, 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||
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GET PRICE |
35,220
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|
ON Semiconductor | MOSFET P-CH 200V 7.3A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | P-Channel | - | 200V | 7.3A (Tc) | 470 mOhm @ 3.65A, 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||
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76,800
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 450V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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18,240
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 7A (Ta) | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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70,080
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 11A (Ta) | 600 mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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75,940
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|
Infineon Technologies | MOSFET N-CH 600V 11A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3 | 33W (Tc) | N-Channel | - | 600V | 11A (Tc) | 440 mOhm @ 7A, 10V | 5V @ 1.9mA | 64nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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13,400
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 9A (Ta) | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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GET PRICE |
67,600
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|
Infineon Technologies | MOSFET N-CH 650V 11A TO220FP | CoolMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3-31 Full Pack | 33W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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|
48,880
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 550V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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63,640
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|
Infineon Technologies | MOSFET N-CH 600V 11A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3-31 Full Pack | 33W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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33,040
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|
Infineon Technologies | MOSFET N-CH 560V 11.6A TO220FP | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 33W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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46,680
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|
Infineon Technologies | MOSFET N-CH 650V 11A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 33W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V |