Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK5012DPP-E0#T2
GET PRICE
RFQ
54,680
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 500V 12A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 500V 12A (Ta) 620 mOhm @ 6A, 10V - 29nC @ 10V 1100pF @ 25V 10V ±30V
FQPF15P12
Per Unit
$0.82
RFQ
56,620
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 120V 15A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 41W (Tc) P-Channel - 120V 15A (Tc) 200 mOhm @ 7.5A, 10V 4V @ 250µA 38nC @ 10V 1100pF @ 25V 10V ±30V
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