- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
46,300
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | 10V | ±30V | ||
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42,860
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|
Renesas Electronics America | MOSFET N-CH 500V 5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 28.5W (Tc) | N-Channel | - | 500V | 5A (Ta) | 1.6 Ohm @ 2A, 10V | - | 13nC @ 10V | 550pF @ 25V | 10V | ±30V | |||
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76,940
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|
ON Semiconductor | MOSFET N-CH 800V 1.5A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 800V | 1.5A (Tc) | 6.3 Ohm @ 750mA, 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | 10V | ±30V | |||
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67,360
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|
ON Semiconductor | MOSFET N-CH 200V 6.3A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | N-Channel | - | 200V | 6.3A (Tc) | 400 mOhm @ 3.15A, 10V | 4V @ 250µA | 25nC @ 10V | 550pF @ 25V | 10V | ±25V | |||
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42,340
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|
ON Semiconductor | MOSFET P-CH 60V 8.6A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | P-Channel | - | 60V | 8.6A (Tc) | 175 mOhm @ 4.3A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 10V | ±25V |
