- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,640
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|
Infineon Technologies | MOSFET N-CH 100V 28A TO220-FP | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220FP | 30W (Tc) | N-Channel | - | 100V | 28A (Tc) | 18 mOhm @ 28A, 10V | 3.5V @ 35µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | |||
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GET PRICE |
30,240
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|
STMicroelectronics | MOSFET N-CH 600V 17A TO220FP | Automotive, AEC-Q101, FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 17A (Tc) | 220 mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±25V | ||
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GET PRICE |
67,180
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|
STMicroelectronics | MOSFET N-CH 600V 20A TO-220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 20A (Tc) | 165 mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±25V | ||
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26,160
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|
STMicroelectronics | MOSFET N-CH 600V 20A TO-220F | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 600V | 20A (Tc) | 165 mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±30V | |||
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29,320
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 52A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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28,780
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 600V 17A TO-220FP | FDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 17A (Tc) | 220 mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±25V |
