4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK12A55D(STA4,Q,M)
Per Unit
$1.31
RFQ
40,720
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 550V 12A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 550V 12A (Ta) 570 mOhm @ 6A, 10V 4V @ 1mA 28nC @ 10V 1550pF @ 25V 10V ±30V
TK13A50DA(STA4,Q,M
Per Unit
$1.25
RFQ
17,920
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 500V 12.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 500V 12.5A (Ta) 470 mOhm @ 6.3A, 10V 4V @ 1mA 28nC @ 10V 1550pF @ 25V 10V ±30V
TK11A60D(STA4,Q,M)
Per Unit
$1.23
RFQ
56,080
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 11A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 11A (Ta) 650 mOhm @ 5.5A, 10V 4V @ 1mA 28nC @ 10V 1550pF @ 25V 10V ±30V
FQPF5N90
Per Unit
$1.04
RFQ
28,840
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 51W (Tc) N-Channel - 900V 3A (Tc) 2.3 Ohm @ 1.5A, 10V 5V @ 250µA 40nC @ 10V 1550pF @ 25V 10V ±30V
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