- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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53,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Central Semiconductor Corp | MOSFET N-CH 800V 12A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 800V | 12A (Ta) | 450 mOhm @ 6A, 10V | 4V @ 250µA | 52.4nC @ 10V | 1090pF @ 100V | 10V | 30V | |||
|
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40,820
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 600V 18A EP TO220FP | MDmesh™ M2-EP | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 18A (Tc) | 188 mOhm @ 9A, 10V | 4.75V @ 250µA | 29nC @ 10V | 1090pF @ 100V | 10V | ±25V |
