Supplier Device Package :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCPF20N60FS
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RFQ
70,400
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ON Semiconductor MOSFET N-CH 600V 20A TO-220F SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCP20N60FS
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RFQ
69,980
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ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCPF20N60T
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RFQ
16,020
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ON Semiconductor MOSFET N-CH 600V 20A TO-220F SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCPF20N60
Per Unit
$3.86
RFQ
76,320
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ON Semiconductor MOSFET N-CH 600V 20A TO220F SuperFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
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