- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
34,120
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|
Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3 | 1.8W (Ta), 176W (Tc) | N-Channel | - | 55V | 90A (Tc) | 3.8 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | ||
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GET PRICE |
41,480
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|
Renesas Electronics America | MOSFET N-CH 40V 90A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 1.8W (Ta), 176W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.8 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | 10V | ±20V | ||
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GET PRICE |
51,200
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|
Renesas Electronics America | MOSFET N-CH 40V 89A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 1.8W (Ta), 147W (Tc) | N-Channel | - | 40V | 90A (Tc) | 3.3 mOhm @ 45A, 10V | 4V @ 250µA | 102nC @ 10V | 5850pF @ 25V | 10V | ±20V | ||
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GET PRICE |
71,140
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|
Renesas Electronics America | MOSFET N-CH 40V 60A TO-220 | - | Active | Bulk | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 1.8W (Ta), 105W (Tc) | N-Channel | - | 40V | 60A (Tc) | 4.3 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3680pF @ 25V | 10V | ±20V | ||
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39,180
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|
STMicroelectronics | N-CHANNEL 60 V, 0.0031 OHM TYP., | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 33W (Tc) | N-Channel | - | 60V | 70A (Tc) | 3.5 mOhm @ 35A, 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 25V | 10V | ±20V | |||
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22,320
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|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
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22,420
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|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 40V | 82A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
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59,040
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|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 50A (Tc) | 11.4 mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | 1990pF @ 25V | 4.5V, 10V | ±20V |
