Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STF40N20
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RFQ
12,960
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STMicroelectronics MOSFET N-CH 200V 40A TO-220FP STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 40W (Tc) N-Channel - 200V 40A (Tc) 45 mOhm @ 20A, 10V 4V @ 250µA 75nC @ 10V 2500pF @ 25V 10V ±20V
STF140N6F7
Per Unit
$1.10
RFQ
39,180
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STMicroelectronics N-CHANNEL 60 V, 0.0031 OHM TYP., STripFET™ Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 33W (Tc) N-Channel - 60V 70A (Tc) 3.5 mOhm @ 35A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V
STF40NF20
Per Unit
$2.13
RFQ
52,040
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STMicroelectronics MOSFET N-CH 200V 40A TO-220FP STripFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 40W (Tc) N-Channel - 200V 40A (Tc) 45 mOhm @ 20A, 10V 4V @ 250µA 75nC @ 10V 2500pF @ 25V 10V ±20V
STF20NF20
Per Unit
$1.27
RFQ
18,960
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 200V 18A TO-220FP STripFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 200V 18A (Tc) 125 mOhm @ 10A, 10V 4V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±20V
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