- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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24,520
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 42A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 120V | 42A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
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61,960
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 32A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 120V | 32A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | |||
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GET PRICE |
37,680
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|
STMicroelectronics | MOSFET N-CH 120V 8.5A TO-220FP | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 120V | 8.5A (Tc) | 180 mOhm @ 7A, 10V | 4V @ 250µA | 21nC @ 10V | 460pF @ 25V | 10V | ±20V | ||
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21,260
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 120V | 72A (Tc) | 4.5 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | |||
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40,040
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 120V | 56A (Tc) | 7.5 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V |
