- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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65,160
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 50V 25A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 30W (Tc) | N-Channel | 50V | 25A (Ta) | 46 mOhm @ 12A, 10V | 2V @ 1mA | 25nC @ 10V | 900pF @ 10V | 4V, 10V | ±20V | ||
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48,680
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|
Sanken | MOSFET N-CH 50V 50A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | 50V | 50A (Ta) | 15 mOhm @ 25A, 10V | 4.2V @ 250µA | - | 2000pF @ 10V | 10V | ±20V | |||
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61,060
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|
Sanken | MOSFET N-CH 50V 50A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | 50V | 50A (Ta) | 13 mOhm @ 25A, 10V | 2.5V @ 250µA | - | 2700pF @ 10V | 10V | ±20V | |||
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41,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Sanken | MOSFET N-CH 50V 75A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 40W (Tc) | N-Channel | 50V | 75A (Ta) | 10 mOhm @ 37A, 10V | 4.5V @ 250µA | 70nC @ 10V | 3200pF @ 10V | 10V | ±20V |