- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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30,860
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STMicroelectronics | MOSFET N-CH 60V 20A TO220FP | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 28W (Tc) | N-Channel | - | 60V | 20A (Tc) | 70 mOhm @ 10A, 10V | 4V @ 250µA | 18nC @ 10V | 400pF @ 25V | 10V | ±20V | ||
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50,140
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|
ON Semiconductor | MOSFET N-CH 100V 20A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33.8W (Tc) | N-Channel | - | 100V | 20A (Tc) | 38.2 mOhm @ 5.9A, 10V | 4.5V @ 250µA | 35nC @ 10V | 1800pF @ 25V | 10V | ±20V | |||
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79,540
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Rohm Semiconductor | MOSFET N-CH 600V 20A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | - | 600V | 20A (Tc) | 196 mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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79,920
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|
Infineon Technologies | MOSFET N-CH 100V 20A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 54W (Tc) | N-Channel | - | 100V | 20A (Tc) | 52 mOhm @ 11A, 10V | 4V @ 250µA | 94nC @ 10V | 1400pF @ 25V | 10V | ±20V |