- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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62,800
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CHANNEL 800V 8A TO220 | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 28W (Tc) | N-Channel | - | 800V | 8A (Tc) | 600 mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | 570pF @ 500V | 10V | ±20V | |||
|
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26,480
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 800V 8A TO220F | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30.5W (Tc) | N-Channel | - | 800V | 8A (Tc) | 650 mOhm @ 4A, 10V | 4.5V @ 800µA | 35nC @ 10V | 1565pF @ 100V | 10V | ±20V | |||
|
|
16,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 8A TO220FP | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 40W (Tc) | N-Channel | - | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V |
