Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPA60R299CPXKSA1
Per Unit
$0.88
RFQ
70,240
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 11A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 33W (Tc) N-Channel - 600V 11A (Tc) 299 mOhm @ 6.6A, 10V 3.5V @ 440µA 29nC @ 10V 1100pF @ 100V 10V ±20V
IPA50R299CPXKSA1
Per Unit
$0.67
RFQ
72,400
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 550V 12A TO220-3 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 104W (Tc) N-Channel - 550V 12A (Tc) 299 mOhm @ 6.6A, 10V 3.5V @ 440µA 31nC @ 10V 1190pF @ 100V 10V ±20V
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