Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPA057N08N3GXKSA1
Per Unit
$1.08
RFQ
56,580
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 80V 60A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 39W (Tc) N-Channel - 80V 60A (Tc) 5.7 mOhm @ 60A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
IPA057N06N3GXKSA1
Per Unit
$1.07
RFQ
76,360
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 60A TO220-3-31 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 38W (Tc) N-Channel - 60V 60A (Tc) 5.7 mOhm @ 60A, 10V 4V @ 58µA 82nC @ 10V 6600pF @ 30V 10V ±20V
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